特點 |
符號 |
單元 |
說明 |
Absolute Maximum Ratings |
- |
- |
Maximum value of limit per each item |
Operating Temperature |
Topr |
(℃) |
maximum Temperature at driving of semiconductor |
Storage Temperature |
Tstg |
(℃) |
maximum Temperature at non-operation of semiconductor |
Soldering Temperature |
Tsol |
(℃) |
Acceptable sddering temperature at maximum |
特點 |
符號 |
單元 |
說明 |
Power Dissipation |
P |
(mW) |
Permissible Power dissipation between Anode and chathode |
Forward Voltage |
VF |
(V) |
Voltage between Anode and chathode at forward current drive |
Forward Current |
IF |
(mA) |
Forward current between Anode and chathode at LED drive |
Pulse Forward Current |
IFP |
(mA) |
Maximum Forward current between Anode and chathode at LED pulse drive |
Reverse Voltage |
VR |
(V) |
Permissible Reverse direct voltage from chathode to Anode at LED drive |
Reverse Current |
IR |
(μA) |
Permissible Reverse direct current from chathode to Anode at LED drive |
Radiant Flux |
Φe |
(mW) |
Radiant energy per time / square emitted from LED |
Power Output |
Po |
(mW) |
Amount of power of radiant flux that LED produces at its output |
Peak Wavelength |
λp |
(nm) |
Peak wavelength in emitting wavelength region |
Spectral Half Width |
⊿λ |
(nm) |
Wavelength band which becomes half level of energy to peak wavelength |
Half Angle |
⊿θ |
(°) |
Beam angle which becomes over half level of energy to that of peak position |
特點 |
符號 |
單元 |
說明 |
Power Dissipation Photo Transistor |
PC |
(mW) |
Permissible Power dissipation between collector and emitter |
Power Dissipation Photo Diode |
PD |
(mW) |
ermissible Power dissipation between Anode and chathode |
Collector-Emitter Voltage |
VCEO |
(V) |
Direct Voltage between Collector and emitter at base open and light detecting |
Emitter-Collector Voltage |
VECO |
(V) |
Direct Voltage between emitter and collector at base open and light detecting |
Reverse Voltage Photo Diode |
VR |
(V) |
Permissible Reverse direct voltage from chathode to Anode at light detecting |
Light Current Photo Transistor |
IC |
(μA)(mA) |
Direct current to be forwarded to collector at light detecting |
Light Current Photo Diode |
ISC |
(nA)(μA) |
Direct short current to be forwarded at light detecting |
Dark Current Photo Transistor |
ICEO |
(nA)(μA) |
Direct current between collector and emitter in dark and at superimposed voltage |
Dark Current Photo Diode |
ID |
(nA)(μA) |
Direct current forwarded to photodiode in dark and at superimposed voltage in reverse direction |
Illumination |
EV |
(lx) |
the luminous flux per unit area on an intercepting surface |
Collector-Emitter Saturation Voltage |
VCE(sat) |
(V) |
Voltage between Collector and emitter at saturated light detecting |
Peak Spectral response |
λp |
(nm) |
Wavelength which has relative peak sensitivity in sensing wavelength region |
Half Angle |
⊿θ |
(°) |
Sensitive angle which becomes over half level of energy detection to that of peak position |
Low Level Output Voltage |
VOL |
(V) |
Direct Voltage to output at level of output current is low |
High Level Output Voltage |
VOH |
(V) |
Direct Voltage to output at level of output current is high |
Low Level Output Current |
IOL |
(mA) |
Direct output current forwarded at superimposed voltage of low level |
High Level Output Current |
IOH |
(mA) |
Direct output current forwarded at superimposed voltage of high level |
Low Level Supply Current |
ICCL |
(mA) |
Supply current at drive of low level output current |
High Level Supply Current |
ICCH |
(mA) |
Supply current at drive of high level output current |
Response Time Rise Time |
tr |
(ns)(μs) |
Refer to the figure. |
Response Time Delay Time |
td |
(ns)(μs) |
Refer to the figure. |
Response Time Fall Time |
tf |
(ns)(μs) |
Refer to the figure. |
Response Time Storage Time |
ts |
(ns)(μs) |
Refer to the figure. |
Response Time Propagation Time Low to High |
tPLH |
(ns)(μs) |
Refer to the figure. |
Response Time Propagation Time High to Low |
tPHL |
(ns)(μs) |
Refer to the figure. |